Original language | Undefined/Unknown |
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Journal | Journal of Applied Physics |
Volume | 109 |
Issue number | 2 |
Publication status | Published - 2011 |
A systematic study of (NH4) 2S passivation (22 10 5 or 1 on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers
Éamon O’Connor, B Brennan, Vladimir Djara, Karim Cherkaoui, Scott Monaghan, Simon B Newcomb, R Contreras, M Milojevic, Gregory Hughes, Martyn E Pemble
Research output: Contribution to journal › Article › peer-review