A systematic study of (NH4) 2S passivation (22 10 5 or 1 on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers

Éamon O’Connor, B Brennan, Vladimir Djara, Karim Cherkaoui, Scott Monaghan, Simon B Newcomb, R Contreras, M Milojevic, Gregory Hughes, Martyn E Pemble

Research output: Contribution to journalArticlepeer-review

Original languageUndefined/Unknown
JournalJournal of Applied Physics
Volume109
Issue number2
Publication statusPublished - 2011

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