Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Rohit V Galatage; Dmitry M Zhernokletov; Hong Dong; B Brennan; Christopher L Hinkle; Robert M Wallace; Eric M Vogel

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Rohit V Galatage
, Dmitry M Zhernokletov
, Hong Dong
, B Brennan
, Christopher L Hinkle
, Robert M Wallace
, Eric M Vogel

Research output: Contribution to journal › Article › peer-review

74 Citations (Scopus)

Original language	Undefined/Unknown
Journal	Journal of Applied Physics
Volume	116
Issue number	1
Publication status	Published - 2014

Cite this

@article{e8dc78f68d834b8582553cccb3cd3960,

title = "Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states",

author = "Galatage, \{Rohit V\} and Zhernokletov, \{Dmitry M\} and Hong Dong and B Brennan and Hinkle, \{Christopher L\} and Wallace, \{Robert M\} and Vogel, \{Eric M\}",

year = "2014",

language = "Undefined/Unknown",

volume = "116",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "1",

}

TY - JOUR

T1 - Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

AU - Galatage, Rohit V

AU - Zhernokletov, Dmitry M

AU - Dong, Hong

AU - Brennan, B

AU - Hinkle, Christopher L

AU - Wallace, Robert M

AU - Vogel, Eric M

PY - 2014

Y1 - 2014

M3 - Article

SN - 0021-8979

VL - 116

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -