Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors

RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, Robert M Wallace, EM Vogel

Research output: Contribution to journal › Article › peer-review

Cite this

@article{d4cff3633bf9472fb706e2cdf29f50b7,

title = "Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors",

author = "RV Galatage and H Dong and DM Zhernokletov and B Brennan and CL Hinkle and Wallace, {Robert M} and EM Vogel",

year = "2011",

language = "Undefined/Unknown",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "17",

}

TY - JOUR

T1 - Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors

AU - Galatage, RV

AU - Dong, H

AU - Zhernokletov, DM

AU - Brennan, B

AU - Hinkle, CL

AU - Wallace, Robert M

AU - Vogel, EM

PY - 2011

Y1 - 2011

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -