Half-cycle atomic layer deposition reaction study using O3 and H2O oxidation of Al2O3 on In0. 53Ga0. 47As

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Original language	Undefined/Unknown
Pages (from-to)	H205
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	6
Publication status	Published - 2009

Cite this

@article{a4d60636672b44b4b5a4583c4fdc3486,

title = "Half-cycle atomic layer deposition reaction study using O3 and H2O oxidation of Al2O3 on In0. 53Ga0. 47As",

author = "B Brennan and M Milojevic and HC Kim and PK Hurley and J Kim and G Hughes and RM Wallace",

year = "2009",

language = "Undefined/Unknown",

volume = "12",

pages = "H205",

journal = "Electrochemical and Solid-State Letters",

publisher = "IOP Publishing",

number = "6",

}

TY - JOUR

T1 - Half-cycle atomic layer deposition reaction study using O3 and H2O oxidation of Al2O3 on In0. 53Ga0. 47As

AU - Brennan, B

AU - Milojevic, M

AU - Kim, HC

AU - Hurley, PK

AU - Kim, J

AU - Hughes, G

AU - Wallace, RM

PY - 2009

Y1 - 2009

M3 - Article

VL - 12

SP - H205

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -