Half-cycle atomic layer deposition reaction study using O<inf>3</inf> and H<inf>2</inf>O oxidation of Al<inf>2</inf>O<inf>3</inf> on In <inf>0.53</inf>Ga<inf>0.47</inf>As

B. Brennan, Marko Milojevic, H.C. Kim, P.K. Hurley, Jiyoung Kim, GJ Hughes, R.M. Wallace

Research output: Contribution to journalArticlepeer-review

Original languageUndefined/Unknown
JournalElectrochemical and Solid-State Letters
DOIs
Publication statusPublished - 2009

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