Half-cycle atomic layer deposition reaction study using O<inf>3</inf> and H<inf>2</inf>O oxidation of Al<inf>2</inf>O<inf>3</inf> on In <inf>0.53</inf>Ga<inf>0.47</inf>As

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Original language	Undefined/Unknown
Journal	Electrochemical and Solid-State Letters
DOIs	https://doi.org/10.1149/1.3109624
Publication status	Published - 2009

Access to Document

@article{5fe5b30961bf418295ceb16317e083d0,

title = "Half-cycle atomic layer deposition reaction study using O3 and H2O oxidation of Al2O3 on In 0.53Ga0.47As",

author = "B. Brennan and Marko Milojevic and H.C. Kim and P.K. Hurley and Jiyoung Kim and GJ Hughes and R.M. Wallace",

year = "2009",

doi = "10.1149/1.3109624",

language = "Undefined/Unknown",

journal = "Electrochemical and Solid-State Letters",

publisher = "IOP Publishing",

}

TY - JOUR

T1 - Half-cycle atomic layer deposition reaction study using O3 and H2O oxidation of Al2O3 on In 0.53Ga0.47As

AU - Brennan, B.

AU - Milojevic, Marko

AU - Kim, H.C.

AU - Hurley, P.K.

AU - Kim, Jiyoung

AU - Hughes, GJ

AU - Wallace, R.M.

PY - 2009

Y1 - 2009

UR - https://www.scopus.com/pages/publications/64549101193

U2 - 10.1149/1.3109624

DO - 10.1149/1.3109624

M3 - Article

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

ER -