In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N

Xiaoye Qin; Barry Brennan; Hong Dong; Jiyoung Kim; Christopher L Hinkle; Robert M Wallace

doi:10.1063/1.4812243

In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N

Xiaoye Qin
, Barry Brennan
, Hong Dong
, Jiyoung Kim
, Christopher L Hinkle
, Robert M Wallace

University of Texas at Dallas

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The atomic layer deposition (ALD) of HfO2 on the native oxide, NH4OH, and atomic hydrogen treated Al0.25Ga0.75N surface was studied using in situ X-ray photoelectron spectroscopy (XPS), after each individual “half cycle” of the ALD process. During the deposition process, minimal change in the chemical states of Ga and Al is detected, with no evidence of interfacial oxide generation. The initial HfO2 growth rate on the native oxide Al0.25Ga0.75N surface is very low, however, exposure of the Al0.25Ga0.75N surface to atomic hydrogen decreases the concentration of carbon and oxygen and enhances the HfO2 growth rate.

Original language	English
Journal	Journal of Applied Physics
Volume	113
Issue number	24
DOIs	https://doi.org/10.1063/1.4812243
Publication status	Published - 26 Jun 2013
Externally published	Yes

Keywords

ultra-high vacuum
crystallography
materials treatment
atomic layer deposition
auger electron spectroscopy,
semiconductor materials,
thin films
X-ray photoelectron spectroscopy (XPS)

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10.1063/1.4812243

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@article{eec612e14b3348448aea028d716d14c8,

title = "In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N",

abstract = "The atomic layer deposition (ALD) of HfO2 on the native oxide, NH4OH, and atomic hydrogen treated Al0.25Ga0.75N surface was studied using in situ X-ray photoelectron spectroscopy (XPS), after each individual “half cycle” of the ALD process. During the deposition process, minimal change in the chemical states of Ga and Al is detected, with no evidence of interfacial oxide generation. The initial HfO2 growth rate on the native oxide Al0.25Ga0.75N surface is very low, however, exposure of the Al0.25Ga0.75N surface to atomic hydrogen decreases the concentration of carbon and oxygen and enhances the HfO2 growth rate.",

keywords = "ultra-high vacuum, crystallography, materials treatment, atomic layer deposition, auger electron spectroscopy,, semiconductor materials,, thin films, X-ray photoelectron spectroscopy (XPS)",

author = "Xiaoye Qin and Barry Brennan and Hong Dong and Jiyoung Kim and Hinkle, \{Christopher L\} and Wallace, \{Robert M\}",

year = "2013",

month = jun,

day = "26",

doi = "10.1063/1.4812243",

language = "English",

volume = "113",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "24",

}

TY - JOUR

T1 - In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N

AU - Qin, Xiaoye

AU - Brennan, Barry

AU - Dong, Hong

AU - Kim, Jiyoung

AU - Hinkle, Christopher L

AU - Wallace, Robert M

PY - 2013/6/26

Y1 - 2013/6/26

N2 - The atomic layer deposition (ALD) of HfO2 on the native oxide, NH4OH, and atomic hydrogen treated Al0.25Ga0.75N surface was studied using in situ X-ray photoelectron spectroscopy (XPS), after each individual “half cycle” of the ALD process. During the deposition process, minimal change in the chemical states of Ga and Al is detected, with no evidence of interfacial oxide generation. The initial HfO2 growth rate on the native oxide Al0.25Ga0.75N surface is very low, however, exposure of the Al0.25Ga0.75N surface to atomic hydrogen decreases the concentration of carbon and oxygen and enhances the HfO2 growth rate.

AB - The atomic layer deposition (ALD) of HfO2 on the native oxide, NH4OH, and atomic hydrogen treated Al0.25Ga0.75N surface was studied using in situ X-ray photoelectron spectroscopy (XPS), after each individual “half cycle” of the ALD process. During the deposition process, minimal change in the chemical states of Ga and Al is detected, with no evidence of interfacial oxide generation. The initial HfO2 growth rate on the native oxide Al0.25Ga0.75N surface is very low, however, exposure of the Al0.25Ga0.75N surface to atomic hydrogen decreases the concentration of carbon and oxygen and enhances the HfO2 growth rate.

KW - ultra-high vacuum

KW - crystallography

KW - materials treatment

KW - atomic layer deposition

KW - auger electron spectroscopy,

KW - semiconductor materials,

KW - thin films

KW - X-ray photoelectron spectroscopy (XPS)

U2 - 10.1063/1.4812243

DO - 10.1063/1.4812243

M3 - Article

SN - 0021-8979

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 24

ER -

In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N

Abstract

Keywords

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