In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0. 25Ga0. 75N

Xiaoye Qin, Barry Brennan, Hong Dong, Jiyoung Kim, Christopher L Hinkle, Robert M Wallace

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Cite this

@article{eec612e14b3348448aea028d716d14c8,

title = "In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0. 25Ga0. 75N",

author = "Xiaoye Qin and Barry Brennan and Hong Dong and Jiyoung Kim and Hinkle, \{Christopher L\} and Wallace, \{Robert M\}",

year = "2013",

language = "Undefined/Unknown",

volume = "113",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "24",

}

TY - JOUR

T1 - In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0. 25Ga0. 75N

AU - Qin, Xiaoye

AU - Brennan, Barry

AU - Dong, Hong

AU - Kim, Jiyoung

AU - Hinkle, Christopher L

AU - Wallace, Robert M

PY - 2013

Y1 - 2013

M3 - Article

SN - 0021-8979

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 24

ER -