In-situ characterization of Ga2O passivation of In0. 53Ga0. 47As prior to high-k dielectric atomic layer deposition

Marko Milojevic; Rocio Contreras-Guerrero; E O’Connor; B Brennan; Paul K Hurley; Jiyoung Kim; CL Hinkle; Robert M Wallace

In-situ characterization of Ga2O passivation of In0. 53Ga0. 47As prior to high-k dielectric atomic layer deposition

Marko Milojevic, Rocio Contreras-Guerrero, E O’Connor, B Brennan, Paul K Hurley, Jiyoung Kim, CL Hinkle, Robert M Wallace

Sligo Research Office

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Applied Physics Letters
Volume	99
Issue number	4
Publication status	Published - 2011

Cite this

@article{1d4323a1baf7468da641ef329e9e254c,

title = "In-situ characterization of Ga2O passivation of In0. 53Ga0. 47As prior to high-k dielectric atomic layer deposition",

author = "Marko Milojevic and Rocio Contreras-Guerrero and E O{\textquoteright}Connor and B Brennan and Hurley, \{Paul K\} and Jiyoung Kim and CL Hinkle and Wallace, \{Robert M\}",

year = "2011",

language = "Undefined/Unknown",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "4",

}

TY - JOUR

T1 - In-situ characterization of Ga2O passivation of In0. 53Ga0. 47As prior to high-k dielectric atomic layer deposition

AU - Milojevic, Marko

AU - Contreras-Guerrero, Rocio

AU - O’Connor, E

AU - Brennan, B

AU - Hurley, Paul K

AU - Kim, Jiyoung

AU - Hinkle, CL

AU - Wallace, Robert M

PY - 2011

Y1 - 2011

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -