In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric

E OConnor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ME Pemble, PK Hurley, B Brennan, GJ Hughes

Research output: Contribution to journal › Article › peer-review

Cite this

@article{3b47833be95e45d79cfe825996c0db09,

title = "In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric",

author = "E OConnor and RD Long and K Cherkaoui and KK Thomas and F Chalvet and IM Povey and ME Pemble and PK Hurley and B Brennan and GJ Hughes",

year = "2008",

language = "Undefined/Unknown",

volume = "92",

pages = "022902--022902",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "2",

}

TY - JOUR

T1 - In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric

AU - OConnor, E

AU - Long, RD

AU - Cherkaoui, K

AU - Thomas, KK

AU - Chalvet, F

AU - Povey, IM

AU - Pemble, ME

AU - Hurley, PK

AU - Brennan, B

AU - Hughes, GJ

PY - 2008

Y1 - 2008

M3 - Article

SN - 0003-6951

VL - 92

SP - 22902

EP - 22902

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -