In-situ Raman spectroscopy of electronic processes in fullerene thin films

S. B. Phelan, B. S. O'Connell, G. Farrell, G. Chambers, H. J. Byrne

Research output: Contribution to journalConference articlepeer-review

Abstract

The current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

Original languageEnglish
Pages (from-to)261-266
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume725
DOIs
Publication statusPublished - 2002
Externally publishedYes
EventOrganic and Polymeric materials and Devices - Optical, Electrical and Optoelectronic Properties - San Francisco, CA, United States
Duration: 1 Apr 20025 Apr 2002

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