In situ XPS chemical analysis of MnSiO3 copper diffusion barrier layer formation and simultaneous fabrication of metal oxide semiconductor electrical test MOS structures

Conor Byrne; Barry Brennan; Anthony P McCoy; Justin Bogan; Anita Brady; Greg Hughes

In situ XPS chemical analysis of MnSiO3 copper diffusion barrier layer formation and simultaneous fabrication of metal oxide semiconductor electrical test MOS structures

Conor Byrne
, Barry Brennan
, Anthony P McCoy
, Justin Bogan
, Anita Brady
, Greg Hughes

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	2470-2477
Number of pages	8
Journal	ACS Applied Materials Interfaces
Volume	8
Issue number	4
Publication status	Published - 2016

Cite this

@article{3d44f845049e41a0a9f04c66be09e90b,

title = "In situ XPS chemical analysis of MnSiO3 copper diffusion barrier layer formation and simultaneous fabrication of metal oxide semiconductor electrical test MOS structures",

author = "Conor Byrne and Barry Brennan and McCoy, \{Anthony P\} and Justin Bogan and Anita Brady and Greg Hughes",

year = "2016",

language = "Undefined/Unknown",

volume = "8",

pages = "2470--2477",

journal = "ACS Applied Materials Interfaces",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - In situ XPS chemical analysis of MnSiO3 copper diffusion barrier layer formation and simultaneous fabrication of metal oxide semiconductor electrical test MOS structures

AU - Byrne, Conor

AU - Brennan, Barry

AU - McCoy, Anthony P

AU - Bogan, Justin

AU - Brady, Anita

AU - Hughes, Greg

PY - 2016

Y1 - 2016

M3 - Article

VL - 8

SP - 2470

EP - 2477

JO - ACS Applied Materials Interfaces

JF - ACS Applied Materials Interfaces

IS - 4

ER -