Investigation of Tunneling Current in SiO2/HfO2 Gate Stacks for Flash Memory Applications

Bhaswar Chakrabarti; Heesoo Kang; Barry Brennan; Tae Joo Park; Kurtis D Cantley; Adam Pirkle; Stephen McDonnell; Jiyoung Kim; Robert M Wallace; Eric M Vogel

Investigation of Tunneling Current in SiO2/HfO2 Gate Stacks for Flash Memory Applications

Bhaswar Chakrabarti
, Heesoo Kang
, Barry Brennan
, Tae Joo Park
, Kurtis D Cantley
, Adam Pirkle
, Stephen McDonnell
, Jiyoung Kim
, Robert M Wallace
, Eric M Vogel

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	4189-4195
Number of pages	7
Journal	IEEE transactions on electron devices
Volume	58
Issue number	12
Publication status	Published - 2011

Cite this

@article{24d872df4ef74875975e797380102e76,

title = "Investigation of Tunneling Current in SiO2/HfO2 Gate Stacks for Flash Memory Applications",

author = "Bhaswar Chakrabarti and Heesoo Kang and Barry Brennan and Park, \{Tae Joo\} and Cantley, \{Kurtis D\} and Adam Pirkle and Stephen McDonnell and Jiyoung Kim and Wallace, \{Robert M\} and Vogel, \{Eric M\}",

year = "2011",

language = "Undefined/Unknown",

volume = "58",

pages = "4189--4195",

journal = "IEEE transactions on electron devices",

publisher = "IEEE Computer Society",

number = "12",

}

TY - JOUR

T1 - Investigation of Tunneling Current in SiO2/HfO2 Gate Stacks for Flash Memory Applications

AU - Chakrabarti, Bhaswar

AU - Kang, Heesoo

AU - Brennan, Barry

AU - Park, Tae Joo

AU - Cantley, Kurtis D

AU - Pirkle, Adam

AU - McDonnell, Stephen

AU - Kim, Jiyoung

AU - Wallace, Robert M

AU - Vogel, Eric M

PY - 2011

Y1 - 2011

M3 - Article

VL - 58

SP - 4189

EP - 4195

JO - IEEE transactions on electron devices

JF - IEEE transactions on electron devices

IS - 12

ER -