Low-Temperature Atomic-Layer-Deposited High-Dielectric for p-Channel In0.7Ga0.3As/GaAs0.35Sb0.65 Heterojunction Tunneling Field-Effect Transistor

Bijesh Rajamohanan; Dheeraj Mohata; Dmitry M Zhernokletov; Barry Brennan; Robert M Wallace; Roman Engel-Herbert; Suman Datta

Low-Temperature Atomic-Layer-Deposited High-Dielectric for p-Channel In0.7Ga0.3As/GaAs0.35Sb0.65 Heterojunction Tunneling Field-Effect Transistor

Bijesh Rajamohanan, Dheeraj Mohata, Dmitry M Zhernokletov, Barry Brennan, Robert M Wallace, Roman Engel-Herbert, Suman Datta

Sligo Research Office

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	101201
Number of pages	1
Journal	Applied Physics Express
Issue number	6
Publication status	Published - 2013

Cite this

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title = "Low-Temperature Atomic-Layer-Deposited High-Dielectric for p-Channel In0.7Ga0.3As/GaAs0.35Sb0.65 Heterojunction Tunneling Field-Effect Transistor",

author = "Bijesh Rajamohanan and Dheeraj Mohata and Zhernokletov, {Dmitry M} and Barry Brennan and Wallace, {Robert M} and Roman Engel-Herbert and Suman Datta",

year = "2013",

language = "Undefined/Unknown",

pages = "101201",

journal = "Applied Physics Express",

publisher = "IOP Publishing",

number = "6",

}

TY - JOUR

T1 - Low-Temperature Atomic-Layer-Deposited High-Dielectric for p-Channel In0.7Ga0.3As/GaAs0.35Sb0.65 Heterojunction Tunneling Field-Effect Transistor

AU - Rajamohanan, Bijesh

AU - Mohata, Dheeraj

AU - Zhernokletov, Dmitry M

AU - Brennan, Barry

AU - Wallace, Robert M

AU - Engel-Herbert, Roman

AU - Datta, Suman

PY - 2013

Y1 - 2013

M3 - Article

SP - 101201

JO - Applied Physics Express

JF - Applied Physics Express

IS - 6

ER -