Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system

Conor Byrne; B Brennan; R Lundy; J Bogan; A Brady; YY Gomeniuk; S Monaghan; Paul K Hurley; Greg Hughes

Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system

Conor Byrne, B Brennan, R Lundy, J Bogan, A Brady, YY Gomeniuk, S Monaghan, Paul K Hurley, Greg Hughes

Sligo Research Office

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	227-236
Number of pages	10
Journal	Materials Science in Semiconductor Processing
Volume	63
Publication status	Published - 2017

Cite this

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title = "Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system",

author = "Conor Byrne and B Brennan and R Lundy and J Bogan and A Brady and YY Gomeniuk and S Monaghan and Hurley, {Paul K} and Greg Hughes",

year = "2017",

language = "Undefined/Unknown",

volume = "63",

pages = "227--236",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Pergamon",

}

TY - JOUR

T1 - Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system

AU - Byrne, Conor

AU - Brennan, B

AU - Lundy, R

AU - Bogan, J

AU - Brady, A

AU - Gomeniuk, YY

AU - Monaghan, S

AU - Hurley, Paul K

AU - Hughes, Greg

PY - 2017

Y1 - 2017

M3 - Article

SN - 1369-8001

VL - 63

SP - 227

EP - 236

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -