Silicon interfacial passivation layer chemistry for high-k/InP interfaces

Hong Dong; Wilfredo Cabrera; Xiaoye Qin; Barry Brennan; Dmitry M Zhernokletov; Christopher L Hinkle; Jiyoung Kim; Yves J Chabal; Robert M Wallace

Silicon interfacial passivation layer chemistry for high-k/InP interfaces

Hong Dong, Wilfredo Cabrera, Xiaoye Qin, Barry Brennan, Dmitry M Zhernokletov, Christopher L Hinkle, Jiyoung Kim, Yves J Chabal, Robert M Wallace

Sligo Research Office

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	7340-7345
Number of pages	6
Journal	ACS Applied Materials Interfaces
Volume	6
Issue number	10
Publication status	Published - 2014

Cite this

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title = "Silicon interfacial passivation layer chemistry for high-k/InP interfaces",

author = "Hong Dong and Wilfredo Cabrera and Xiaoye Qin and Barry Brennan and Zhernokletov, {Dmitry M} and Hinkle, {Christopher L} and Jiyoung Kim and Chabal, {Yves J} and Wallace, {Robert M}",

year = "2014",

language = "Undefined/Unknown",

volume = "6",

pages = "7340--7345",

journal = "ACS Applied Materials Interfaces",

publisher = "American Chemical Society",

number = "10",

}

TY - JOUR

T1 - Silicon interfacial passivation layer chemistry for high-k/InP interfaces

AU - Dong, Hong

AU - Cabrera, Wilfredo

AU - Qin, Xiaoye

AU - Brennan, Barry

AU - Zhernokletov, Dmitry M

AU - Hinkle, Christopher L

AU - Kim, Jiyoung

AU - Chabal, Yves J

AU - Wallace, Robert M

PY - 2014

Y1 - 2014

M3 - Article

VL - 6

SP - 7340

EP - 7345

JO - ACS Applied Materials Interfaces

JF - ACS Applied Materials Interfaces

IS - 10

ER -