Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces

Dmitry M Zhernokletov; Hong Dong; B Brennan; M Yakimov; V Tokranov; S Oktyabrsky; Jiyoung Kim; Robert M Wallace

Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces

Dmitry M Zhernokletov, Hong Dong, B Brennan, M Yakimov, V Tokranov, S Oktyabrsky, Jiyoung Kim, Robert M Wallace

Sligo Research Office

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Original language	Undefined/Unknown
Journal	Applied Physics Letters
Volume	102
Issue number	13
Publication status	Published - 2013

Cite this

@article{77827331db87433f933a699175762c4e,

title = "Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces",

author = "Zhernokletov, {Dmitry M} and Hong Dong and B Brennan and M Yakimov and V Tokranov and S Oktyabrsky and Jiyoung Kim and Wallace, {Robert M}",

year = "2013",

language = "Undefined/Unknown",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "13",

}

TY - JOUR

T1 - Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces

AU - Zhernokletov, Dmitry M

AU - Dong, Hong

AU - Brennan, B

AU - Yakimov, M

AU - Tokranov, V

AU - Oktyabrsky, S

AU - Kim, Jiyoung

AU - Wallace, Robert M

PY - 2013

Y1 - 2013

M3 - Article

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -