Surface and interfacial reaction study of half cycle atomic layer deposited HfO<inf>2</inf> on chemically treated GaSb surfaces

D.M. Zhernokletov, Hong Dong, B. Brennan, M. Yakimov, V. Tokranov, Serge Oktyabrsky, Jiyoung Kim, R.M. Wallace

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Access to Document

@article{ec81f4a286c44044911f2b1214a4f10b,

title = "Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces",

author = "D.M. Zhernokletov and Hong Dong and B. Brennan and M. Yakimov and V. Tokranov and Serge Oktyabrsky and Jiyoung Kim and R.M. Wallace",

year = "2013",

doi = "10.1063/1.4800441",

language = "Undefined/Unknown",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

}

TY - JOUR

T1 - Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces

AU - Zhernokletov, D.M.

AU - Dong, Hong

AU - Brennan, B.

AU - Yakimov, M.

AU - Tokranov, V.

AU - Oktyabrsky, Serge

AU - Kim, Jiyoung

AU - Wallace, R.M.

PY - 2013

Y1 - 2013

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84876148024&partnerID=MN8TOARS

U2 - 10.1063/1.4800441

DO - 10.1063/1.4800441

M3 - Article

SN - 0003-6951

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -