The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$hbox $$Al$$  $$2$$$hbox $$O$$  $$3$$/$hbox $$InGaAs$$ $ MOS System

Paul K Hurley; Éamon O'Connor; Vladimir Djara; Scott Monaghan; Ian M Povey; Rathnait D Long; Brendan Sheehan; Jun Lin; Paul C McIntyre; Barry Brennan

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$hbox $$Al$$ $$2$$$hbox $$O$$ $$3$$/$hbox $$InGaAs$$ $ MOS System

Paul K Hurley, Éamon O'Connor, Vladimir Djara, Scott Monaghan, Ian M Povey, Rathnait D Long, Brendan Sheehan, Jun Lin, Paul C McIntyre, Barry Brennan

Sligo Research Office

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	429-443
Number of pages	15
Journal	IEEE Transactions on Device and Materials Reliability
Volume	13
Issue number	4
Publication status	Published - 2013

Cite this

Hurley, P. K., O'Connor, É., Djara, V., Monaghan, S., Povey, I. M., Long, R. D., Sheehan, B., Lin, J., McIntyre, P. C., & Brennan, B. (2013). The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$hbox $$Al$$ $$2$$$hbox $$O$$ $$3$$/$hbox $$InGaAs$$ $ MOS System. IEEE Transactions on Device and Materials Reliability, 13(4), 429-443.

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title = "The Characterization and Passivation of Fixed Oxide Charges and Interface States in the \$\$hbox \$\$Al\$\$ \$\$2\$\$\$hbox \$\$O\$\$ \$\$3\$\$/\$hbox \$\$InGaAs\$\$ \$ MOS System",

author = "Hurley, \{Paul K\} and {\'E}amon O'Connor and Vladimir Djara and Scott Monaghan and Povey, \{Ian M\} and Long, \{Rathnait D\} and Brendan Sheehan and Jun Lin and McIntyre, \{Paul C\} and Barry Brennan",

year = "2013",

language = "Undefined/Unknown",

volume = "13",

pages = "429--443",

journal = "IEEE Transactions on Device and Materials Reliability",

publisher = "IEEE Computer Society",

number = "4",

}

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$hbox $$Al$$ $$2$$$hbox $$O$$ $$3$$/$hbox $$InGaAs$$ $ MOS System. / Hurley, Paul K; O'Connor, Éamon; Djara, Vladimir et al.
In: IEEE Transactions on Device and Materials Reliability, Vol. 13, No. 4, 2013, p. 429-443.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$hbox $$Al$$ $$2$$$hbox $$O$$ $$3$$/$hbox $$InGaAs$$ $ MOS System

AU - Hurley, Paul K

AU - O'Connor, Éamon

AU - Djara, Vladimir

AU - Monaghan, Scott

AU - Povey, Ian M

AU - Long, Rathnait D

AU - Sheehan, Brendan

AU - Lin, Jun

AU - McIntyre, Paul C

AU - Brennan, Barry

PY - 2013

Y1 - 2013

M3 - Article

VL - 13

SP - 429

EP - 443

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 4

ER -